Samsung Electronics claims industry first with 2-Gb DDR2 SDRAM

Samsung Electronics Co Ltd said it has developed the industry’s first 2-Gigabit (Gb) DDR2 SDRAM utilizing 80-nanometer (nm) process technology.

The high density, DDR2 solution will enhance server and workstation performance and enable faster deployment of memory-intensive applications like real time video conferences, remote medical service, two-way communications, and 3-D graphics, it said.

Samsung said it developed the DDR2 SDRAM using an advanced 80nm process technology, overcoming the industry expectations that 2Gb DRAM manufacture would require sub-65nm circuitry.

The new DRAM technology breakthroughs include a 3-D transistor technology, recess channel array transistor (RCAT), and a new concept architecture process.






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